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Formation of the electrically active centres in silicon irradiated with high energy ions and annealed at temperatures of 350-1050°C

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5 Author(s)
Antonova, I.V. ; Inst. of Semicond. Phys., Novosibirsk, Russia ; Neustroev, E.P. ; Stas, V.F. ; Popov, V.P.
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Three groups of electrically active centers were observed in silicon implanted with high energy ions and annealed in a wide temperature range. The first centers are thermal donors enhance formed in the temperature range of 380-500°C. The second ones are shallow acceptors observed in the temperature range of 500-570°C. The last ones are most likely “new” thermal donors introduced in high concentration after annealing at 600-1050°C. Depth distributions of the centers and-the reasons of their effective formation are discussed

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Ion Implantation Technology, 2000. Conference on

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