By Topic

Formation of the electrically active centres in silicon irradiated with high energy ions and annealed at temperatures of 350-1050°C

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
I. V. Antonova ; Inst. of Semicond. Phys., Novosibirsk, Russia ; E. P. Neustroev ; V. F. Stas ; V. P. Popov
more authors

Three groups of electrically active centers were observed in silicon implanted with high energy ions and annealed in a wide temperature range. The first centers are thermal donors enhance formed in the temperature range of 380-500°C. The second ones are shallow acceptors observed in the temperature range of 500-570°C. The last ones are most likely “new” thermal donors introduced in high concentration after annealing at 600-1050°C. Depth distributions of the centers and-the reasons of their effective formation are discussed

Published in:

Ion Implantation Technology, 2000. Conference on

Date of Conference: