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Ion-implanted silicon detectors of nuclear radiation

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3 Author(s)
Yrchuk, S.Yu. ; Inst. of Steel & Alloys, Moscow, Russia ; Kol'tsov, G.I. ; Kuts, V.A.

The silicon detectors of nuclear radiation are produced by ion implantation. The comparison of the characteristics of detectors conducted by various ways and with use of different modes was carried out. It was shown that with use of optimum modes of manufacturing the detectors have good energy resolution. It was shown also, that the produced structures can work as photocells in pairs with scintillators

Published in:
Ion Implantation Technology, 2000. Conference on

Date of Conference: 2000

Page(s):
95 - 98
Meeting Date :
17 Sep 2000-22 Sep 2000
Print ISBN:
0-7803-6462-7
INSPEC Accession Number:
7048910
Conference Location :
Alpbach
Digital Object Identifier :
10.1109/.2000.924099
Product Type:
Conference Publications

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