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Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

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7 Author(s)

Current collapse in AlGaN/GaN HEMTs has been investigated using photo-ionisation spectroscopy techniques to probe the spatial origins of the traps producing this effect. The results indicate that the responsible traps reside in the high-resistivity GaN buffer layer and are identical to those traps causing current collapse in GaN MESFETs

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Electronics Letters  (Volume:37 ,  Issue: 10 )