Stable multi-domain generation and gate operation for Bloch line memory

Multiple stripe domains for vertical Bloch line storage loops were stabilized around completely etched grooves (main grooves) for a Bloch-line memory. By making subsidiary grooves and guide grooves narrower than the main grooves, the potential wells were deepened in the subsidiary and guide groove regions, compared to that in the main groove region. This enabled domains to stretch with only one pulsed bias field. A multiple-domain arrangement was obtained with only two shots of pulsed bias field. The stabilized domains were found to be confined over a wide bias field range. Successful read/write gate operation was confirmed.<
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