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Individual cell measuring method for FeRAM retention testing

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8 Author(s)
Tanabe, N. ; Syst. Devices & Fundamental Res., NEC Corp., Sagamihara, Japan ; Koike, H. ; Miwa, T. ; Yamada, J.
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We propose a new testing methodology to predict the failure rate for long-term data retention of FeRAM chips. The individual retention time limit for each memory cell is determined by measuring the retention time dependence on the read signal voltage using a novel test system. From this experiment, we found that the retention time limit of each memory cell obeys a Gaussian distribution. We applied this method to the evaluation of 16 kbit FeRAM test chips, and successfully predicted the failure rates for long-term data retention time as the functions of temperature and writing voltage

Published in:

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Date of Conference:

2001

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