By Topic

Reliability degradation of high density DRAM cell transistor junction leakage current induced by band-to-defect tunneling under the off-state bias-temperature stress

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Young Pil Kim ; Semicond. R&D Center, Samsung Electron. Co. Ltd., South Korea ; Young Wook Park ; Joo Tae Moon ; S. U. Kim

The band-to-defect tunneling (BDT) induced junction leakage current of high density DRAM cell transistors under off-state bias-temperature (B-T) stress was studied in detail for the first time. It was found that the BDT leakage current is most critical for limiting the cell transistor scaling. The new off-state B-T stress was proven to be a very effective reliability assessment tool for leakage current degradation of the DRAM cell transistor. It was also found to be useful for assessing reliability degradation of future high density DRAMs

Published in:

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Date of Conference: