Cart (Loading....) | Create Account
Close category search window
 

High-frequency performance of lateral p-n junction photodiodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Tsutsui, N. ; Lab. of Comput. Solid State Phys., Aizu Univ., Japan ; Ryzhii, V. ; Khmyrova, I. ; Vaccaro, Pablo O.
more authors

We developed an analytical device model for quantum well lateral p-n junction photodiodes (LJPDs). The model takes into account the features of the carrier transport in LJPDs and their geometry, which ensure short transit times and a low capacitance. This model is used for calculating the LJPD's characteristics as functions of the signal frequency, bias voltage, and structural parameters and for the estimation of the LJPD ultimate performance

Published in:

Quantum Electronics, IEEE Journal of  (Volume:37 ,  Issue: 6 )

Date of Publication:

Jun 2001

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.