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SiGe HMOSFET differential pair

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6 Author(s)
Michelakisy, K. ; Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK ; Despotopoulos, S. ; Badcock, S.G. ; Papavassiliou, C.
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A SiGe HMOSFET can be engineered to provide enhanced linearity in its output current-voltage characteristics. The additional linearity can he exploited in the design of more linear analogue circuits like the differential pair presented here. From the TCAD data of such a structure, the BSIM3v3 model of the transistor was extracted and simulation results were obtained for the performance of a differential pair. At the specified power of 1.25 mW the input range of the SiGe differential pair at which the percent nonlinearity is below 1%, is roughly twice that of its Si counterpart. Additionally the SiGe circuit is more power efficient since an increase of the power consumption from 1 mW to 1.25 mW accounts for an improvement of about 40% in its input range, as compared to only 10% for Si

Published in:

Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on  (Volume:1 )

Date of Conference:

6-9 May 2001

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