A simulated LC oscillator using multi-input floating-gate MOSFETS

A simulated LC oscillator is proposed using multi-input floating-gate MOSFETs. A negative resistance in the oscillator is realized by the nonlinear resistor circuit with /spl Lambda/-type I-V characteristic. Furthermore, an equivalent inductor circuit is proposed using the multi-input floating-gate MOSFET. The inductance of the circuit can be varied by controlling the external voltage. This simulated inductor is used in the LC oscillator. The resultant LC oscillator is compatible with the standard CMOS process. The oscillation frequency is theoretically driven concerning some of the parasitic capacitances of MOSFETs. Moreover, a prototype chip was fabricated using MOSIS TSMC 0.35 /spl mu/m CMOS process. The preliminary experimental results from the chip are shown.