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Ta additive effect on RF magnetron sputtered CoCr films

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3 Author(s)
H. Tamai ; NEC Corp., Kawasaki, Japan ; K. Tagami ; H. Hayashida

Magnetic properties for sputtered CoCrTa films (18 at.% Cr and 2.0-3.0 at.% Ta), which were deposited under various background pressures Pi, and argon sputtering pressures, P Ar, have been examined. The perpendicular anisotropy field Hk for CoCrTa films maintains high values of 5-6 kOe in a wide range of Pi and PAr , as compared with that for CoCr films. In order to optimize Ta composition, magnetic properties and crystalline microstructures for Ta additive content (0-4.0 at.%) have been investigated. Hk and perpendicular coercivity Hc⊥ increase with increasing Ta concentration above 2.0 at.% Ta. C-axis orientation is improved by adding Ta to CoCr films. However, above 3.0 at.% Ta, Hc⊥ steeply decreases and domain wall motion is observed, owing to the increase in crystalline grain size. The appropriate Ta composition is 2.0-3.0 at.%

Published in:

IEEE Transactions on Magnetics  (Volume:24 ,  Issue: 6 )