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Monolithically integrated low-power phototransceivers for optoelectronic parallel sensing and processing applications

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5 Author(s)
Qasaimeh, O. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Weidong Zhou ; Bhattacharya, Pallab ; Huffaker, Diana
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A low-power GaAs-based monolithically integrated phototransceiver, consisting of a high-gain heterojunction phototransistor (WPT) and a microcavity light-emitting diode (MCLED) or a low-threshold vertical-cavity surface-emitting laser (VCSEL), is demonstrated. The HPT and MCLED/VCSEL are grown by molecular-beam epitaxy in a single step. The phototransistor exhibits a responsivity of 60 A/W at an input power of 1 μW. The input and output wavelengths are 850 and 980 nm, respectively. The MCLED-based phototransceiver exhibits an optical gain of 7 dB and power dissipation of 400 μW for an input power of 1.5 μW. The small signal modulation bandwidth is 80 MHz. On the other hand, the VCSEL-based phototransceiver exhibits an optical gain of 10 dB and power dissipation of 760 μW for an input power of 2.5 μW

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Lightwave Technology, Journal of  (Volume:19 ,  Issue: 4 )