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Pre-silicon parameter generation methodology using BSIM3 for circuit performance-oriented device optimization

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5 Author(s)
Miyama, M. ; Semicond. & Integrated Circuits Div., Hitachi Ltd., Tokyo, Japan ; Kamohara, S. ; Hiraki, M. ; Onozawa, K.
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We present a physical parameter extraction methodology for BSIM3v3 to generate accurate pre-silicon parameters (parameters created before device fabrication). Using this method, the parameters of the 0.20-μm process device can be generated from a 0.25-μm technology with 5% accuracy in a few minutes. We applied this method in optimizing the devices of our microprocessor in the early stages of design

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Semiconductor Manufacturing, IEEE Transactions on  (Volume:14 ,  Issue: 2 )