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Resonant tunneling quantum-dot diodes: physics, limitations, and technological prospects

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3 Author(s)
Luscombe, James H. ; Texas Instrum. Inc., Dallas, TX, USA ; Randall, John N. ; Bouchard, A.M.

The authors discuss the electronic structure and properties of the present generation of resonant-tunneling quantum-dot structures. Quantum dots are zero-dimensional semiconductor nanostructures, i.e., structures in which an electron is quantum-mechanically confined in all three spatial dimensions. Quantum dots appear to represent a viable structure to allow the continued downscaling of critical circuit geometries beyond the currently perceived limits for conventional VLSI devices. As they are currently fabricated, however, quantum-dot diodes have impediments which prevent the full realization of their potential. The authors assess these limitations and discuss measures for their solution

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Proceedings of the IEEE  (Volume:79 ,  Issue: 8 )