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The authors propose an efficient back-bias voltage (Vbb) generator with a newly introduced hybrid pumping circuit (HPC). This hybrid system uses one NMOS pumping transistor and one PMOS pumping transistor and can pump as low as the -Vcc level without a Vth loss. By adopting a triple-well structure at the pumping circuit area, the NMOS transistor can be employed as a pumping transistor without minority carrier injection.
Date of Conference: 19-21 May 1993