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MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55 μm VCSELs

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6 Author(s)
Sagnes, I. ; Lab. pour la Photonique et les Nanostructures, CNRS, Bagneux, France ; Le Roux, G. ; Meriadec, C. ; Mereuta, A.
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A new MOCVD InP/AlGaInAs distributed Bragg reflector for long-wavelength VCSELs is presented. The InP/AlGaInAs system presents a high potential for 1.55 μm VCSELs owing to the combination of its high refractive index contrast (Δn≃0.34) and its low conduction band discontinuity (ΔEc≃150 meV). InP/AlGaInAs mirrors and one half VCSEL (bottom mirror and λ cavity) have been fabricated for the first time using AlGaInAs transparent to 1.55 μm

Published in:

Electronics Letters  (Volume:37 ,  Issue: 8 )

Date of Publication:

12 Apr 2001

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