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Microwave and structural properties of YBa2Cu3O7-δ films on R-cut sapphire buffered with post-annealed CeO2 layer

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6 Author(s)
Yang, W.I. ; Dept. of Phys., Konkuk Univ., Seoul, South Korea ; Lee, S.Y. ; Jang, J.M. ; Ryu, J.S.
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Effects of the post-annealing temperature of CeO2 buffer layer on the microwave and structural properties of YBCO films on CeO2-buffered sapphire (CbS) were investigated using YBCO films grown on CeO2 buffer layer post-annealed at temperatures of 950-1100°C. YBCO films on post-annealed CbS appeared to have better properties than those on as-grown CbS with regard to the morphological, structural and microwave properties when the YBCO films were prepared on CeO2 buffer layer post-annealed at temperatures of 1000-1050°C. The TE011 mode Q of a rutile-leaded cavity resonator with YBCO films on CbS post-annealed at 1000-1050°C showed the unloaded Q as high as 1.8×105 at 77 K at 8.6 GHz, a value more than 2 times the corresponding value with the YBCO films replaced by those on as-grown CbS. Also, the decrease in the unloaded Q of a microstrip resonator made of the YBCO film on CbS post-annealed at 1000°C appeared less than 3% at 60 K for input power increase of 10 dBm, while the corresponding value was about 24% for a microstrip resonator prepared from the YBCO film on as-grown CbS

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Applied Superconductivity, IEEE Transactions on  (Volume:11 ,  Issue: 1 )