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Y-Ba-Cu-O film growth on Y2O3 buffered and nonbuffered SrTiO3 single crystals using precursor films including fluoride

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4 Author(s)
Ichinose, A. ; Komae Res. Lab., Central Res. Inst. of Electr. Power Ind., Tokyo, Japan ; Kikuchi, A. ; Tachikawa, K. ; Akita, S.

A fluoride compound, BaF2, was used in the ex situ post-reaction process which was effective in the preparation of thick YBa2Cu3O7-x (YBCO) films over 1 micrometers for coated conductors. We investigated the YBCO film growth on SrTiO3 single crystal with and without Y2O3 buffer layers using BaF2. In order to suppress the reaction between the YBCO precursor films and the Y2O3 buffer layer, we controlled the atmospheric pressure and changed the evaporation materials to obtain precursor films which included fluoride. No water vapor was introduced during the heat treatment. The epitaxy c-axis oriented YBCO films, with 0.3 μm thickness, were successfully grown on both the Y2O3 buffered and nonbuffered SrTiO3 single crystals using Y, BaF2 and Cu as evaporation sources. We also deposited YBCO films on both substrates using evaporation sources, YF3, Ba and Cu. An appreciably different result has been obtained using YF3 compared to that using BaF2

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Applied Superconductivity, IEEE Transactions on  (Volume:11 ,  Issue: 1 )