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Characterizations of CeO/sub 2/ and BaTiO/sub 3/ double buffer layer for the growth of Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-x/ superconducting thin film

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2 Author(s)
Sung-MIn Kim ; Dept. of Electr. & Comput. Eng., Yonsei Univ., Seoul, South Korea ; Sang Yeol Lee

High quality Y1Ba2Cu3O7-x(Y-Ba-Cu-O) superconducting thin films have been grown on metallic Hastelloy(Ni-Cr-Mo alloys) substrates with Ce02, BaTi03, and Ce02/BaTiO3 buffer layers in-situ by pulsed laser deposition. Ce02 layer revealed that (200) XRD peak became dominant at a specific deposition temperature but the grain size of that film was observed to be small. BaTi03 has shown larger grain size than that of CeO2 by 200 times. Two buffer layers have been integrated to enhance the superconducting properties of Y-Ba-Cu-0 thin film on metallic substrate. This Y-Ba-Cu-O/Ce02/BaTiO3 on metallic substrate shows enhanced superconducting properties of the transition temperature of 85 K and the critical current density of about 8.4 × 104 A/cm2 measured at 77 K mainly due to the enlargement of the grain size of Y-Ba-Cu-0 film with double buffer layer.

Published in:

IEEE Transactions on Applied Superconductivity  (Volume:11 ,  Issue: 1 )