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Double-barrier Josephson junctions: theory and experiment

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6 Author(s)
Brinkman, A. ; Dept. of Appl. Phys., Twente Univ., Enschede, Netherlands ; Cassel, D. ; Golubov, A.A. ; Kupriyanov, M.Yu.
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New theoretical and experimental results on double-barrier SIS'IS Josephson junctions are presented (I is a tunnel barrier, S' is a thin film with critical temperature lower than that of S). The previously developed microscopic model for the stationary case, which describes the critical currents in Nb/Al/Nb junctions, is extended to the non-equilibrium regime of finite voltage. In particular, an intrinsic shunting resistance is estimated from I-V curves. We formulate the requirements for interface barriers in order to realize non-hysteretic SIS'IS junctions with high critical current density and IcR N products. A comparison with single-barrier SIS junctions with high critical current density is carried out

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Applied Superconductivity, IEEE Transactions on  (Volume:11 ,  Issue: 1 )