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Investigation of double-barrier Nb-Al-AlO2-Al-AlOx -(Al-)Nb junctions under high-frequency irradiation

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3 Author(s)
Nevirkovets, I.P. ; Dept. of Phys. & Astron., Northwestern Univ., Evanston, IL, USA ; Ketterson, John B. ; Siegel, M.

We have studied experimentally the current-voltage characteristics of double-barrier Nb-Al-AlOx-Al-AlOx-(Al-)Nb junctions exposed to microwave radiation at 4.2 K. Both integer and fractional Shapiro steps were observed. A complicated behavior of the step heights was observed as a function of both the microwave power and an applied magnetic field. Reasonable agreement with the RSJ model was obtained only for the steps 0 to 2 observed in current-voltage characteristics of the junctions with a “clean” middle Al layer. A deviation from RSJ-like behavior was found for higher-order integer steps and fractional steps. Devices with a “dirty” middle Al layer displayed more significant deviation from RSJ-like behavior. Step heights vs. magnetic field dependences in some cases were found to be qualitatively different from the field dependence of the dc Josephson current

Published in:

Applied Superconductivity, IEEE Transactions on  (Volume:11 ,  Issue: 1 )

Date of Publication:

Mar 2001

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