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Influence of La-doping of YBa2Cu3O7 on transport properties of interface-engineered ramp-edge junctions

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6 Author(s)
J. -K. Heinsohn ; Inst. fur Schicht- und Ionentech., Forschungszentrum Julich GmbH, Germany ; R. Dittmann ; J. Rodriguez Contreras ; J. Scherbel
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We have investigated the influence of La-doping of the YBa2-x LaxCu3O7 (YBCO) thin film electrodes on dc and ac Josephson properties of ramp-edge junctions with interface-engineered barriers. Non-doped optimized junctions exhibit critical current densities, jc, of 5·104 A/cm2 and normal sheet resistances, RN·A, of 3·10-9 Ohm·cm2 at 77 K. The transport properties of junctions with x=0.03 La-doping are quite similar to those of non-doped junctions. La-doping of x=0.05 and x=0.07 leads to an increase of RN·A and decrease of jc by about one order of magnitude. Devices with jc<10 4 A/cm2, which are operating in the short junction limit exhibit current-voltage characteristics without any excess current and 100% modulation of critical current in external magnetic field. The current voltage characteristics exhibit well defined Shapiro steps. The dependence of current-step height on microwave current can be described in the resistively-shunted junction model. The strong changes in the temperature dependencies of jc and RN·A suggest different electrical transport properties for junctions fabricated with non-doped and La-doped YBCO. The temperature dependence of the critical current and the normal resistance allows us to draw conclusions to the transport properties of our junctions

Published in:

IEEE Transactions on Applied Superconductivity  (Volume:11 ,  Issue: 1 )