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Nanometer scale masked ion damage barriers in YBa2Cu3O7-δ

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9 Author(s)
Kang, D.J. ; Interdisciplinary Res. Centre in Superconductivity, Cambridge Univ., UK ; Speaks, R. ; Peng, N.H. ; Webb, R.
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Josephson junctions have been formed in YBa2Cu3 O7-δ by ion implantation though apertures in 450 nm thick Au masks using 50 keV H implants with fluences up to 5×10 18 cm-2. The mask apertures were milled with a focused 30 keV Ga ion beam giving a best measured electrical junction length of about 70 nm. Resistively shunted junction behavior has been observed over a wide temperature range (about 10 K). Shapiro steps have also been measured on these devices. The influence of possible Ga contamination is discussed

Published in:

Applied Superconductivity, IEEE Transactions on  (Volume:11 ,  Issue: 1 )

Date of Publication:

Mar 2001

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