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Fabrication of c-axis oriented YBaCuO trilayer junctions with Ar plasma treatment

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7 Author(s)
H. Sato ; Electrotech. Lab., Ibaraki, Japan ; A. Kaneko ; T. Kaneda ; T. Yamada
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We have fabricated c-axis oriented YBaCuO/PrBaCuO/YBaCuO trilayer junctions on a LSAT single crystal substrate. Since the c-axis oriented junctions had a smaller critical current density Jc compare to (103) oriented YBaCuO trilayer junctions, an Ar plasma treatment was carried out. After base electrode deposition, the film sample was bombarded by Ar plasma generated by a RF signal applying the substrate holder. During the process, only Ar gas was supplied, and a substrate temperature was kept at deposition temperature. A typical junction without Ar plasma treatment had a Jc of 180 A/cm2. The junction with Ar plasma treatment, on the other hand, showed Jc of 1.6 kA/cm2, suggesting that the Ar plasma treatment can be used to improve the junction properties

Published in:

IEEE Transactions on Applied Superconductivity  (Volume:11 ,  Issue: 1 )