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Fabrication of SIS junctions for space borne submillimeter wave mixers using negative resist e-beam lithography

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3 Author(s)
Peron, I. ; DEMIRM, Obs. de Paris, Meudon, France ; Pasturel, P. ; Schuster, K.-F..

We report on the development of a new process for the fabrication of Nb/Al-AlOx/Nb tunnel junctions for channel 1 (480-640 GHz) Superconductor-Insulator-Superconductor (SIS) mixers of HIFI, the Heterodyne Instrument for FIRST (Far InfraRed & Submillimeter Telescope). The process is derived from a standard self-aligned lift-off process but uses negative resist electron beam lithography (EBL) for junction definition. The junction area is tightly controlled down to below 1 μm2 without the complexity of processes using positive electron beam resists. We describe process parameters and experimental results: DC-tests and Fourier Transform Spectrometer (FTS) measurements

Published in:

Applied Superconductivity, IEEE Transactions on  (Volume:11 ,  Issue: 1 )

Date of Publication:

Mar 2001

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