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Fabrication of interface-controlled Josephson junctions using Sr 2AlTaO6 insulating layers

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2 Author(s)
Sung, G.Y. ; Electron. & Telecommun. Res. Inst., Taejon, South Korea ; Kim, J.H.

We fabricated ramp-edge Josephson junctions with barriers formed by interface treatments instead of epitaxially grown barrier layers. A low-dielectric Sr3AlTaO6 (SAT) layer was used as an ion-milling mask as well as an insulating layer for the ramp-edge junctions. An ion-milled YBa2Cu3O7-x (YBCO)-edge surface was not exposed to solvent through all fabrication procedures. The barriers were produced by structural modification at the edge of the YBCO base electrode using high energy ion-beam treatment prior to deposition of the YBCO counter electrode. We investigated the effects of high energy ion-beam treatment, annealing, and counter electrode deposition temperature on the characteristics of the interface-controlled Josephson junctions. The junction parameters such as Tc, Ic, RN were measured and discussed in relation to the barrier layer depending on the process parameters

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Applied Superconductivity, IEEE Transactions on  (Volume:11 ,  Issue: 1 )