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1/f noise in high current density NbN/AlN/NbN tunnel junctions

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4 Author(s)
Zhen Wang ; Commun. Res. Lab., KARC, Kobe, Japan ; Kawakami, A. ; Saito, A. ; Hamasaki, K.

Low frequency noise characteristics of epitaxial NbN/AlN/NbN tunnel junctions have been investigated. For all of our junctions with different current densities, the voltage noise power spectrum Sv (f) showed a frequency dependence of 1/f type. The magnitude of the Sv(f) exhibited two distinct types of dependency on the current density and AlN barrier thickness. We consider that this may result from a difference in the crystal structures of the AlN barrier by consulting with the barrier thickness dependence of tunnel barrier heights. We also estimated the 1/f noise parameter η using the Rogers and Buhrman's empirical theory for the Sv(f), and investigated the relationship between the η and the current density Jc and the tunnel barrier thickness dAlN. The tunnel barrier was characterized by investigating the η-dAlN relation. It was found that the η-Jc and η-d AlN relation in our high current density junctions, i.e, in the epitaxial tunnel junctions, are different from nonepitaxial tunnel junctions

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Applied Superconductivity, IEEE Transactions on  (Volume:11 ,  Issue: 1 )