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Low-loss epitaxial NbN/MgO/NbN trilayers for THz applications

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3 Author(s)
Kawakami, A. ; Commun. Res. Lab., Kansai Adv. Res. Center, Kobe, Japan ; Zhen Wang ; Miki, S.

To improve the performance of Josephson oscillators and SIS mixers over 700 GHz, we have developed a fabrication process to grow epitaxial NbN/MgO/NbN trilayers by reactive dc-sputtering. Trilayers were fabricated on a single-crystal MgO substrate at ambient temperature. NbN and MgO films were deposited by reactive dc-sputtering with an Nb and Mg target, respectively. The MgO inter-layer thickness was changed up to 480 nm, but, TC and 20-K resistivity of the NbN upper-layer showed no remarkable dependency and they were 15.7 K and about 60 μΩcm, respectively. To evaluate the RF performance of the epitaxial NbN films, we fabricated Josephson junctions with a microstrip resonator constructed from an epitaxial NbN/MgO/NbN trilayer. The I-V characteristics of the junction exhibited resonance steps up to 2.5 mV, which suggests that the epitaxial NbN films have low loss up to 1.2 THz

Published in:

Applied Superconductivity, IEEE Transactions on  (Volume:11 ,  Issue: 1 )