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A huge bulk (or drain) current I/sub b/ (or I/sub d/) peak versus gate voltage was observed for the 0.25-/spl mu/m or sub-0.25-/spl mu/m metal-oxide-semiconductor field effect transistors (MOSTs) with high doping concentration source/drain extension, when the drain-bulk p-n junction is forward biased. This current is increased under Fowler-Nordheim (FN) or channel hot carrier (CHC) stress and is identified as thermal-trap-tunneling electron current at the drain extension-gate overlap region. It is extremely sensitive that one interface trap will induce 0.1 pA current increment of peak I/sub b/ (or I/sub d/).
Date of Publication: May 2001