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Interface traps at high doping drain extension region in sub-0.25-μm MOSTs

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3 Author(s)
G. Chen ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; M. F. Li ; X. Yu

A huge bulk (or drain) current I/sub b/ (or I/sub d/) peak versus gate voltage was observed for the 0.25-μm or sub-0.25-μm metal-oxide-semiconductor field effect transistors (MOSTs) with high doping concentration source/drain extension, when the drain-bulk p-n junction is forward biased. This current is increased under Fowler-Nordheim (FN) or channel hot carrier (CHC) stress and is identified as thermal-trap-tunneling electron current at the drain extension-gate overlap region. It is extremely sensitive that one interface trap will induce 0.1 pA current increment of peak I/sub b/ (or I/sub d/).

Published in:

IEEE Electron Device Letters  (Volume:22 ,  Issue: 5 )