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Improved high-voltage lateral RESURF MOSFETs in 4H-SiC

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4 Author(s)
Banerjee, S. ; Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA ; Chatty, K. ; Chow, T.P. ; Gutmann, R.J.

High-voltage lateral RESURF metal oxide semiconductor field effect transistors (MOSFETs) in 4H-SiC have been experimentally demonstrated, that block 900 V with a specific on-resistance of 0.5 /spl Omega/-cm/sup 2/. The RESURF dose in 4H-SiC to maximize the avalanche breakdown voltage is almost an order of magnitude higher than that of silicon; however this high RESURF dose leads to oxide breakdown and reliability concerns in thin (100-200 nm) gate oxide devices due to high electric field (>3-4 MV/cm) in the oxide. Lighter RESURF doses and/or thicker gate oxides are required in SiC lateral MOSFETs to achieve highest breakdown voltage capability.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 5 )

Date of Publication:

May 2001

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