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New method to determine the HBT's capacitances using multi-bias S-parameter measurements

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5 Author(s)
Ouslimani, A. ; Ecole Nat. de l''Electron. et de ses Appl., Cergy-Pontoise, France ; Hafdallah, H. ; Gaubert, J. ; Medjnoun, M.
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A new method to determine the base-emitter and the intrinsic and extrinsic base-collector capacitances is proposed. It uses nonlinear equations obtained from a combination of six coefficients of polynomial functions named “expression blocks”. The polynomial function are derived from suitable organisation of combined Z-parameter analytical expressions of the small-signal HBT equivalent circuit. The value of each “expression blocks"” is extracted in the adequate frequency range from S-parameter measurements. The method is validated treating HBTs at multi-bias conditions

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High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on

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