Referenced Items are not available for this document.
A new self-assembly process is presented which allows the fabrication of 3-dimensional metal structures in a fully parallel low temperature process. The fabrication method is suitable as a post-process so as to integrate inductors on radio- and microwave frequency ICs, with the aim of reducing losses and parasitic capacitance by separating the coil from the substrate. Meandered microwave inductors have been fabricated on a low resistivity silicon substrate, and a peak Q of 11 was measured for a 2 nH inductor, compared to a peak Q of 4 for the same structure in proximity to the substrate
Published in:
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Date of Conference: 2000
- Page(s):
- 128 - 133
- Meeting Date :
- 13 Nov 2000-14 Nov 2000
- Print ISBN:
- 0-7803-6550-X
- INSPEC Accession Number:
- 6984450
- Conference Location :
- Glasgow
- Digital Object Identifier :
- 10.1109/EDMO.2000.919045
- Product Type:
- Conference Publications
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