Referenced Items are not available for this document.
A transimpedance amplifier packaged with an InP p-i-n photodiode has been demonstrated for 10-Gb/s SONET receiver. The shunt feedback transimpedance amplifier is fabricated in 0.25-μm modular Si BiCMOS technology. The transimpedance of 55 dBΩ is achieved at a bandwidth of 9 GHz by applying shunt peaking and filter termination at the input. The optical sensitivity of -17 dBm was measured at 10 Gb/s for a bit-error rate of 10-12
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:36
,
Issue:
5
)
Date of Publication: May 2001
- Page(s):
- 769 - 776
- ISSN :
- 0018-9200
- INSPEC Accession Number:
- 6927295
- Digital Object Identifier :
- 10.1109/4.918914
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- May 2001
- Sponsored by :
- IEEE Solid-State Circuits Society
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