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A Si BiCMOS transimpedance amplifier for 10-Gb/s SONET receiver

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4 Author(s)
Kim, H.H. ; Lucent Technol. Bell Labs., Holmdel, NJ, USA ; Chandrasekhar, S. ; Burrus, C.A., Jr. ; Bauman, J.

A transimpedance amplifier packaged with an InP p-i-n photodiode has been demonstrated for 10-Gb/s SONET receiver. The shunt feedback transimpedance amplifier is fabricated in 0.25-μm modular Si BiCMOS technology. The transimpedance of 55 dBΩ is achieved at a bandwidth of 9 GHz by applying shunt peaking and filter termination at the input. The optical sensitivity of -17 dBm was measured at 10 Gb/s for a bit-error rate of 10-12

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:36 ,  Issue: 5 )