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A physically based mobility model for numerical simulation of nonplanar devices

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4 Author(s)
Lombardi, C. ; SGS-Thomson Microelectron., Milan, Italy ; Manzini, S. ; Saporito, A. ; Vanzi, M.

A semiempirical model for carrier mobility in silicon inversion layers is presented. The model, strongly oriented to CAD (computer-aided design) applications, is suitable for two-dimensional numerical simulations of nonplanar devices. A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields, channel impurity concentrations of between 5×1014 cm -3 and 1017 cm-3 for the acceptor density of states and 6×1014 cm-3 and 3×1017 cm-3 for the donor density of states; and temperatures between 200 K and 460 K. Best-fit model parameters are extracted by comparing the calculated drain conductance with a very large set of experimental data points

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:7 ,  Issue: 11 )