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Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

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13 Author(s)
Maximov, M.V. ; Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany ; Asryan, L.V. ; Shernyakov, Yu.M. ; Tsatsul'nikov, A.F.
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Experimental and theoretical study was made of injection lasers based on InAs/GaAs quantum dots (QDs) formed by the activated alloy phase separation and emitting at about 1.3 μm. Electroluminescence and gain spectra were investigated. The maximum modal gain is measured experimentally using two different techniques. Threshold current densities as low as 22 A cm-2 per QD sheet were achieved. A step-like switch from ground- to excited-state transition lasing was observed with an increasing cavity loss. The characteristic temperatures for a sample with four cleaved sides and a 2-mm long stripe device at 300 K were 140 and 83 K, respectively. Single lateral-mode continuous-wave (CW) operation with the maximum output power of 210 mW was realized. Threshold characteristics of a laser were simulated taking into account radiative recombination in QDs, the wetting layer, and the optical confinement layer. The dependence of the threshold current density on the cavity length was shown to be extremely sensitive to the QD-array parameters determining the maximum gain for ground- and excited-state transitions and to the waveguide design. Our analysis reveals that nonradiative recombination channels may play an important role in the laser operation

Published in:

Quantum Electronics, IEEE Journal of  (Volume:37 ,  Issue: 5 )

Date of Publication:

May 2001

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