By Topic

Use of implant isolation for fabrication of vertical cavity surface-emitting laser diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
K. Tai ; AT&T Bell Labs., Murray Hill, NJ, USA ; R. J. Fischer ; K. W. Wang ; S. N. G. Chu
more authors

The authors report the first successful use of implant isolation by singly charged oxygen to fabricate MBE-grown GaAs-AlGaAs vertical cavity surface-emitting lasers (VCSELs). Almost identical room-temperature pulsed thresholds of 26 mA on 15 mu m diameter devices with 0.25 mu m GaAs active thicknesses were obtained using implant isolation against etched mesa isolation. The planar nature of implant isolation greatly simplifies processing to allow more sophisticated use of VCSELs.

Published in:

Electronics Letters  (Volume:25 ,  Issue: 24 )