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16 GHz low-power 1:4 prescalar fabricated in 1.0 μm BiFET technology

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4 Author(s)
Runge, K. ; Rockwell Sci. Center, Thousand Oaks, CA, USA ; Zamoardi, P.J. ; Pierson, R.L. ; Penny, J.

An experimental 16 GHz low-power 1:4 prescalar in 1 μm BiFET technology is reported. The prescalar was designed in both heterojunction bipolar (HBT) technology, and BiFET technology. The BiFET version utilised MESFET current sources, thereby reducing the supply voltage from -6.8 to 4.65 V (-6 to -4.15 V at lower frequencies), which results in power savings of approximately 30%

Published in:

Electronics Letters  (Volume:37 ,  Issue: 6 )