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a-Si:H TFTs using low-temperature CVD of Si3H8

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4 Author(s)
Breddels, P.A. ; Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan ; Kanoh, H. ; Sugiura, O. ; Matsumura, M.

a-Si:H layers have been deposited by chemical vapour deposition (CVD) at 350 degrees C using Si3H8 as the source gas. Inverted staggered gate thin-film transistors (TFTs) were fabricated with plasma-CVD-grown SiNx as the gate insulator. Electron field-effect mobilities of 0.45 cm2/Vs were obtained and the on/off ratio in the drain current was 106.

Published in:

Electronics Letters  (Volume:25 ,  Issue: 24 )