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2W reliable operation of λ=735 nm GaAsP/AlGaAs laser diodes

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10 Author(s)
Sumpf, B. ; Ferdinand-Braun-Inst. fur Hochstfrequenztechnik., Berlin, Germany ; Beister, G. ; Erbert, G. ; Fricke, J.
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Reliable operation of 735 nm laser diodes based on a tensile-strained GaAsP quantum well embedded in an AlGaAs large optical cavity structure is reported. The 100 μm stripe width laser diodes were aged at a record high output power of 2W for 2000 hours. The degradation rates were 3.6×10-5 h-1

Published in:

Electronics Letters  (Volume:37 ,  Issue: 6 )

Date of Publication:

15 Mar 2001

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