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A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation

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4 Author(s)
Bonani, F. ; Dipt. di Elettronica, Politecnico di Torino, Italy ; Guerrieri, S.D. ; Ghione, G. ; Pirola, M.

The paper presents a novel, unified technique to evaluate, through physics-based modeling, the frequency conversion and noise behavior of semiconductor devices operating in the large-signal periodic regime. Starting from the harmonic balance (HE) solution of the spatially discretized physics-based model under (quasi) periodic forced operation, frequency conversion at the device ports in the presence of additional input tones is simulated by application of the small-signal large-signal network approach to the model. Noise analysis under large-signal operation readily follows as a direct extension of classical approaches by application of the frequency conversion principle to the modulated microscopic noise sources and to the propagation of these to the external device terminals through a Green's function technique. An efficient numerical implementation is discussed within the framework of a drift-diffusion model and some examples are finally provided on the conversion and noise behavior of rf Si diodes

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 5 )

Date of Publication:

May 2001

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