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A GaAs solar cell with an efficiency of 26.2% at 1000 suns and 25.0% at 2000 suns

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8 Author(s)
Algora, C. ; Inst. de Energia Solar, Ciudad Univ., Madrid, Spain ; Ortiz, E. ; Rey-Stolle, I. ; Diaz, V.
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A GaAs solar cell without prismatic covers, with the highest efficiency known to the authors in the range of 1000-2000 suns for a single junction, is presented. Low temperature liquid phase epitaxy is used for its growth. In addition to improvements such as the achievement of a good quality material or a low contact resistance, this solar cell exhibits specific enhanced aspects. Among the most noticeable are: (1) an innovative design; (2) a double and gradual emitter layer; (3) a small size: 1 mm2, (4) a finger width of the front metal grid of 3 μm; and (5) a tailored ARC deposition based on a nondestructive and accurate AlGaAs window layer characterization. As a consequence, an efficiency of 26.2% at 1000 suns and 25.0% at 2000 suns AM1.5D (standard conditions) is achieved thanks mainly to a short-circuit current density at 1000 suns of 26.8 A/cm2 (and 53.6 A/cm2 at 2000 suns) with a simultaneous series resistance of 3 mΩ·cm2

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Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 5 )