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Experimental observation of microwave oscillations produced by pulsed silicon carbide IMPATT diode

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3 Author(s)
K. V. Vassilevski ; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia ; A. V. Zorenko ; K. Zekentes

4H-SiC single drift p+-n-n+ IMPATT diodes have been fabricated and characterised. The diodes have avalanche breakdown voltages of ~290 V. Microwave oscillations appeared in X-band at a threshold current of 0.3 A. The maximum output power of 300 mW was measured at an input pulsed current of 0.35 A

Published in:

Electronics Letters  (Volume:37 ,  Issue: 7 )