By Topic

A new approach to the robust wirebonding

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)

Electronics manufacturers are pursuing miniaturization in order to cope with the prevailing electronic trends. In doing so, they are faced with shrinking the size of silicon chips, while adding more functions (the number of the inputs and outputs, I/Os). However, the IC component yield decreases with the increase in I/Os, since the wirebonding process yield providing the interconnection for the I/Os remains constant. The bottom line is lower profits. Based on the diffusion theories behind wirebonding and the effects of both thermal and kinetic energies on the behavior of materials, the authors propose a model for a “robust” bond and an approach to obtain that model in the wirebonding process

Published in:

Advanced Packaging Materials: Processes, Properties and Interfaces, 2001. Proceedings. International Symposium on

Date of Conference:

2001