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Interconnection technique of ALIVH(R) substrate

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6 Author(s)
Suzuki, T. ; Device Eng. Dev. Center, Matsushita Electr. Ind. Co. Ltd., Kadoma, Japan ; Tomekawa, S. ; Ogawa, T. ; Andoh, D.
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The unique interconnection using conductive paste of the ALIVH(R) (any layer interstitial via hole) substrate, especially its structure, was studied. Calculations and SEM images suggested the existence of metallic bonding between copper particles and between copper particles and copper foil. By assuming that metallic bonds exist, interconnection resistance variation with temperature could be explained. We also studied a considerable number of factors for obtaining strong interconnection. As a consequence, the compression and the binder system of the conductive paste play important roles in achieving strong interconnection

Published in:

Advanced Packaging Materials: Processes, Properties and Interfaces, 2001. Proceedings. International Symposium on

Date of Conference:

2001

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