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A power amplifier with efficiency improved using defected ground structure

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5 Author(s)
Jong-Sik Lim ; Appl. Electromagnetics. Lab., Seoul Nat. Univ., South Korea ; Ho-Sup Kim ; Jun-Seok Park ; Dal Ahn
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The authors report the effects of defected ground structure (DGS) on the output power and efficiency of a class-A power amplifier. In order to evaluate the effects of DGS on the efficiency and output power, two class-A GaAs FET amplifiers have been measured at 4.3/spl sim/4.7 GHz. One of them has a 50 /spl Omega/ microstrip line with DGS at the output section, while the other has only 50 /spl Omega/ straight line. It is shown that DGS rejects the second harmonic at the output and yields improved output power and power added efficiency by 1/spl sim/5%.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:11 ,  Issue: 4 )