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Large area deposition of hydrogenated amorphous silicon by VHF-PECVD using novel electrodes

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3 Author(s)
Ito, N. ; ANELVA Corp., Tokyo, Japan ; Kondo, M. ; Matsuda, Akihisa

A novel discharge source capable of depositing a-Si:H films on large area has been developed. This discharge source consists of “U” shaped loop-antenna. A number of antennas were arranged in parallel to each other, forming one plane in front of a substrate. a-Si:H was deposited on a 1000 mm×500 mm glass substrate at 0.4 nm/sec using VHF (81 MHz) plasma. The nonuniformity of deposition rate in the direction along the antenna was about ±80% when the VHF power was equally fed to each antenna with a continuous mode. Whereas, this nonuniformity could be suppressed to less than ±10% by controlling the power feeding method with a pulse mode

Published in:

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Date of Conference:

2000