Referenced Items are not available for this document.
A novel discharge source capable of depositing a-Si:H films on large area has been developed. This discharge source consists of “U” shaped loop-antenna. A number of antennas were arranged in parallel to each other, forming one plane in front of a substrate. a-Si:H was deposited on a 1000 mm×500 mm glass substrate at 0.4 nm/sec using VHF (81 MHz) plasma. The nonuniformity of deposition rate in the direction along the antenna was about ±80% when the VHF power was equally fed to each antenna with a continuous mode. Whereas, this nonuniformity could be suppressed to less than ±10% by controlling the power feeding method with a pulse mode
Published in:
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Date of Conference: 2000
- Page(s):
- 900 - 903
- Meeting Date :
- 15 Sep 2000-22 Sep 2000
- ISSN :
- 0160-8371
- Print ISBN:
- 0-7803-5772-8
- INSPEC Accession Number:
- 7035288
- Conference Location :
- Anchorage, AK
- Digital Object Identifier :
- 10.1109/PVSC.2000.916029
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
