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Hydrogenated microcrystalline silicon (μc-Si:H) films of single- and double-layered structures have been formed at different microwave powers and hydrogen dilution ratios on hydrogen-radical CVD method. The films have been analyzed using X-ray diffraction measurements (XRD), the E2 peak intensity of ultraviolet reflectance and electrical conductivity. It was clarified that crystallinity of the upper growth layer is affected strongly by that of the lower initial layer and consequently it controls electrical conductivity. These results suggest that in continuous deposition of μc-Si:H the same effects can be caused even if deposition conditions are changed during deposition
Published in:
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Date of Conference: 2000
- Page(s):
- 888 - 891
- Meeting Date :
- 15 Sep 2000-22 Sep 2000
- ISSN :
- 0160-8371
- Print ISBN:
- 0-7803-5772-8
- INSPEC Accession Number:
- 7035285
- Conference Location :
- Anchorage, AK
- Digital Object Identifier :
- 10.1109/PVSC.2000.916026
- Product Type:
- Conference Publications
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