Referenced Items are not available for this document.
This work demonstrates the availability of using porous silicon as semi-insulating substrate for β-SiC high temperature optical sensing devices. An MSM structure was fabricated both on a porous silicon substrate and a conventional silicon substrate, respectively. Experimental results show the optical current ratio can be improved up to 400% at room temperature and 3000% at 200°C operating temperature, respectively, with the porous silicon substrate
Published in:
Electron Devices, IEEE Transactions on
(Volume:48
,
Issue:
4
)
Date of Publication: Apr 2001
- Page(s):
- 801 - 803
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 6907992
- Digital Object Identifier :
- 10.1109/16.915729
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- Apr 2001
- Sponsored by :
- IEEE Electron Devices Society
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