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Using porous silicon as semi-insulating substrate for β-SiC high temperature optical-sensing devices

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6 Author(s)
Hsieh, W.T. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Fang, Y.K. ; Wu, K.H. ; Lee, W.J.
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This work demonstrates the availability of using porous silicon as semi-insulating substrate for β-SiC high temperature optical sensing devices. An MSM structure was fabricated both on a porous silicon substrate and a conventional silicon substrate, respectively. Experimental results show the optical current ratio can be improved up to 400% at room temperature and 3000% at 200°C operating temperature, respectively, with the porous silicon substrate

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 4 )

Date of Publication:

Apr 2001

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