Cart (Loading....) | Create Account
Close category search window
 

Temperature dependent studies of InP/InGaAs avalanche photodiodes based on time domain modeling

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Xiao, Y.G. ; Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada ; Deen, M.J.

Using a simplified time domain modeling approach, the temperature dependent performance characteristics, such as multiplication gain, breakdown voltage, -3 dB bandwidth, gain bandwidth product and excess noise factor, have been systematically investigated for InP/InGaAs separate absorption, grading, charge and multiplication avalanche photodiodes as a function of temperature from -50°C to 110°C. In order to model the -3 dB bandwidth versus gain dependence based on the simplified approach, empirical expressions have been proposed to consider the effects of hole diffusion, hole trapping, RC (resistance-capacitance) and gain-bandwidth product limit together with the fast Fourier transform component of the impulse response from the time domain modeling. The modeling results generally agree with or can explain the corresponding experimental results. The effects of changing material parameters on the modeling results are also discussed. In addition, we have found that ErO, the average energy loss per collision due to optical phonon scattering at 0 K, plays a dominant role in determining the -3 dB bandwidth near breakdown and the slope of the temperature dependence of the breakdown voltage. Further, the improved performance characteristics at decreased temperatures indicate the potential application prospects of the InP/lnGaAs APDs in low temperature environments

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 4 )

Date of Publication:

Apr 2001

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.