Cart (Loading....) | Create Account
Close category search window
 

Comprehensive understanding on the high dielectric constant insulating layers for alternating-current thin-film electroluminescent devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Lee, Yun-Hi ; Inf. Display & Nano-Devices Lab., Korea Inst. of Sci. & Technol., Seoul, South Korea ; Byeong-Kwon Ju ; Kim, Dong-Ho ; Oh, Myung-Hwan

We introduced thin-film electroluminescent cells (TFEL) with a new multilayered-BaTiO3 layer for the low-voltage driven devices. We begin by simulating the basic parameters for TFEL devices in electrostatic boundary condition and point out how the insulator parameters influence the typical operating properties of the devices. Next, we performed the voltage accelerated breakdown testing of the multilayered-BaTiO3 having both high dielectric constant and high breakdown strength. The time-zero-breakdown distribution is shown to be dependent on surface roughness, while the long-term failure studied by time-dependent-dielectric breakdown technique at high field is dependent on the bulk characteristics, i.e., transition layers within m-BT films. Thirdly, the TFEL devices were prepared using the multilayered-BaTiO3 as dielectric materials. We observed a decrease of turn-on voltage with increasing thickness and the increase of the maximum overvoltage. Finally, typical symmetric capacitance-voltage (C-V) and internal charge-phosphor field characteristics were obtained for the device with thin m-BT layers. With increasing thickness of m-BT the significant asymmetry with respect to the applied voltage polarity was observed. This is a main difference as compared with the symmetric characteristics of conventional TFEL devices with low dielectric constant insulators. The experimental results indicate the fact that a selection of the thickness of upper m-BT and their deposition process would strongly affect the interfacial characteristics as well as bulk characteristics of an as-grown ZnS:Pr, Ce layer

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 4 )

Date of Publication:

Apr 2001

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.