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A novel SCR structure for on-chip ESD protection implemented with a deep submicron triple well CMOS technology is presented. The triple well technology offers the possibility of biasing the p-well, on which the structure is built, under transient ESD stress conditions and independently from the substrate. This greatly affects the turn on mechanism of the structure. Unlike conventional SCR devices, the proposed p-well coupled SCR offers a reduced triggering voltage level as well as the enhanced ESD performance of the SCR devices. The turn on of this structure is realized with a common RC trigger network. The concept is supported by device simulation results.